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- Title
AIN-Based Dilute Magnetic Semiconductors.
- Authors
Frazier, R. M.; Thaler, G. T.; Gila, B. P.; Stapleton, J.; Overberg, M. E.; Abernathy, C. R.; Pearton, S. J.; Ren, F.; Zavada, J. M.
- Abstract
AlMnN and AlCrN have been synthesized by gas-source molecular beam epitaxy (GSMBE). Using optimized growth conditions and compositions, sccm films as determined by x-ray diffraction (XRD) and transmission electron microscopy, which also show room-temperature magnetic behavior were obtained for both materials. Chromium was found to produce greater magnetic ordering as evidenced by a higher technical saturation. The AlCrN also exhibited a higher remanent magnetization and a M versus T behavior more typical of ferromagnetism than that observed for AlMnN. These results suggest that Cr is a superior dopant for formation of AlN-based, dilute magnetic semiconductors.
- Subjects
SEMICONDUCTORS; ALUMINUM compounds; MANGANESE compounds; NITROGEN compounds; TRANSMISSION electron microscopy; X-ray diffraction
- Publication
Journal of Electronic Materials, 2005, Vol 34, Issue 4, p365
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-005-0112-7