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- Title
Monolithically integrated avalanche photodiode receiver in 0.35 µm bipolar complementary metal oxide semiconductor.
- Authors
Jukić, Tomislav; Steindl, Bernhard; Enne, Reinhard; Zimmermann, Horst
- Abstract
We present the first optoelectronic integrated bipolar complementary metal oxide semiconductor (BiCMOS) receiver chip with an avalanche photodiode (APD). A large 200-µm-diameter APD connected to a high-speed transimpedance amplifier designed for a 2-Gbps optical wireless communication system is proposed. The complete chip was realized in a 0.35-µm silicon BiCMOS technology. Due to the thick intrinsic zone and multiplication gain, the responsivity of the APD reaches a value of up to 120 A/W for a wavelength of 675 nm. Furthermore, the capacitance of the APD is <500 fF for reverse bias voltages above 18 V. The receiver has a supply voltage of 3.3 V with a current consumption of 76 mA. The delivered 50-Ω single-ended output swing is 550 mVpp and the overall transimpedance is 260 kΩ with 1.02-GHz bandwidth. The achieved data rate is 2 Gbps with a sensitivity of -30.3 dBm at a bit error rate <10-9.
- Subjects
AVALANCHE photodiodes; COMPLEMENTARY metal oxide semiconductors; PLASTIC optical fibers; OPTICAL receivers; WIRELESS communications
- Publication
Optical Engineering, 2015, Vol 54, Issue 11, p1
- ISSN
0091-3286
- Publication type
Article
- DOI
10.1117/1.OE.54.11.110502