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- Title
Localized interlayer excitons in MoSe<sub>2</sub>–WSe<sub>2</sub> heterostructures without a moiré potential.
- Authors
Mahdikhanysarvejahany, Fateme; Shanks, Daniel N.; Klein, Matthew; Wang, Qian; Koehler, Michael R.; Mandrus, David G.; Taniguchi, Takashi; Watanabe, Kenji; Monti, Oliver L. A.; LeRoy, Brian J.; Schaibley, John R.
- Abstract
Interlayer excitons (IXs) in MoSe2–WSe2 heterobilayers have generated interest as highly tunable light emitters in transition metal dichalcogenide (TMD) heterostructures. Previous reports of spectrally narrow (<1 meV) photoluminescence (PL) emission lines at low temperature have been attributed to IXs localized by the moiré potential between the TMD layers. We show that spectrally narrow IX PL lines are present even when the moiré potential is suppressed by inserting a bilayer hexagonal boron nitride (hBN) spacer between the TMD layers. We compare the doping, electric field, magnetic field, and temperature dependence of IXs in a directly contacted MoSe2–WSe2 region to those in a region separated by bilayer hBN. The doping, electric field, and temperature dependence of the narrow IX lines are similar for both regions, but their excitonic g-factors have opposite signs, indicating that the origin of narrow IX PL is not the moiré potential. The spectrally narrow photoluminescence lines occurring in transition metal dichalcogenides (TMD) heterostructures at low temperature have been attributed to interlayer excitons (IXs) localized by the moiré potential between the TMD layers. Here, the authors show that these lines are present even when the moiré potential is suppressed by inserting an hBN spacer between the TMD layers.
- Subjects
HETEROSTRUCTURES; LIGHT emitting diodes; BORON nitride; TRANSITION metals; ELECTRIC fields
- Publication
Nature Communications, 2022, Vol 13, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-022-33082-6