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- Title
Bismuth and antimony-based oxyhalides and chalcohalides as potential optoelectronic materials.
- Authors
Ran, Zhao; Wang, Xinjiang; Li, Yuwei; Yang, Dongwen; Zhao, Xin-Gang; Biswas, Koushik; Singh, David J.; Zhang, Lijun
- Abstract
In the last decade the ns2 cations (e.g., Pb2+ and Sn2+)-based halides have emerged as one of the most exciting new classes of optoelectronic materials, as exemplified by for instance hybrid perovskite solar absorbers. These materials not only exhibit unprecedented performance in some cases, but they also appear to break new ground with their unexpected properties, such as extreme tolerance to defects. However, because of the relatively recent emergence of this class of materials, there remain many yet to be fully explored compounds. Here, we assess a series of bismuth/antimony oxyhalides and chalcohalides using consistent first principles methods to ascertain their properties and obtain trends. Based on these calculations, we identify a subset consisting of three types of compounds that may be promising as solar absorbers, transparent conductors, and radiation detectors. Their electronic structure, connection to the crystal geometry, and impact on band-edge dispersion and carrier effective mass are discussed. Optoelectronics: new kids in town Detailed first-principles calculations reveal the potential of bismuth-based and antimony-based chalcohalides and oxyhalides for optoelectronics applications. The presence of ions with outer electron configuration of ns2 in halides has rendered them very promising for applications, like solar cells. In this work, collaborators from Jilin University, University of Missouri, and Arkansas State University have used density functional theory to study the properties of several chalcohalides and oxyhalides containing bismuth or antimony ns2 cations. It turns out that certain bismuth-based chalcohalides are promising for solar cells applications and room-temperature radiation detectors, with bandgaps in the range 1.5–2 eV. Some oxyhalides, on the other hand, with bandgaps above 3 eV are hole-conducting, which makes them suitable for transparent conducting materials, if they can be doped. This work underlines that further experimental work is needed to fully assess the potential of this class of materials for optoelectronics applications.
- Publication
NPJ Computational Materials, 2018, Vol 4, Issue 1, pN.PAG
- ISSN
2057-3960
- Publication type
Article
- DOI
10.1038/s41524-018-0071-1