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- Title
Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method.
- Authors
Chang, Ming-Chiang; Ho, Po-Hsun; Tseng, Mao-Feng; Lin, Fang-Yuan; Hou, Cheng-Hung; Lin, I-Kuan; Wang, Hsin; Huang, Pin-Pin; Chiang, Chun-Hao; Yang, Yueh-Chiang; Wang, I-Ta; Du, He-Yun; Wen, Cheng-Yen; Shyue, Jing-Jong; Chen, Chun-Wei; Chen, Kuei-Hsien; Chiu, Po-Wen; Chen, Li-Chyong
- Abstract
Most chemical vapor deposition methods for transition metal dichalcogenides use an extremely small amount of precursor to render large single-crystal flakes, which usually causes low coverage of the materials on the substrate. In this study, a self-capping vapor-liquid-solid reaction is proposed to fabricate large-grain, continuous MoS2 films. An intermediate liquid phase-Na2Mo2O7 is formed through a eutectic reaction of MoO3 and NaF, followed by being sulfurized into MoS2. The as-formed MoS2 seeds function as a capping layer that reduces the nucleation density and promotes lateral growth. By tuning the driving force of the reaction, large mono/bilayer (1.1 mm/200 μm) flakes or full-coverage films (with a record-high average grain size of 450 μm) can be grown on centimeter-scale substrates. The field-effect transistors fabricated from the full-coverage films show high mobility (33 and 49 cm2 V−1 s−1 for the mono and bilayer regions) and on/off ratio (1 ~ 5 × 108) across a 1.5 cm × 1.5 cm region. Here, the authors develop a self-capping vapour-liquid-solid reaction to fabricate large-grain continuous MoS2 films, whereby an intermediate liquid phase-Na2Mo2O7 is formed through a eutectic reaction of MoO3 and NaF, followed by sulphurisation into MoS2.
- Subjects
EUTECTIC reactions; CHEMICAL vapor deposition; FIELD-effect transistors; REACTION forces; TRANSITION metals; GRAIN
- Publication
Nature Communications, 2020, Vol 11, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-020-17517-6