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- Title
Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots.
- Authors
Tsatsul’nikov, A. F.; Volovik, B. V.; Bedarev, D. A.; Zhukov, A. E.; Kovsh, A. R.; Ledentsov, N. N.; Maksimov, M. V.; Maleev, N. A.; Musikhin, Yu. G.; Ustinov, V. M.; Bert, N. A.; Kop’ev, P. S.; Bimberg, D.; Alferov, Zh. I.
- Abstract
Mechanisms of InGaA1As solid solution decomposition stimulated by a purposely deposited layer of InAs quantum dots are studied. Decomposition of the solid solution results in an increase in the effective quantum dot size and the shift of the photoluminescence line to as far as 1.3 μm. When aluminum atoms are added to the solid solution, the effect of In atom "conservation" within the dots is observed, which also causes an increase in the effective dot size.
- Subjects
QUANTUM dots; SOLID solutions
- Publication
Semiconductors, 2000, Vol 34, Issue 3, p323
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1187980