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- Title
Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description.
- Authors
Shpotyuk, O. I.; Vakiv, M. M.; Shpotyuk, M. V.; Ingram, A.; Filipecki, J.; Vaskiv, A. P.
- Abstract
A newly modified correlation equation between defect-related positron lifetime τ2 (ns) defined within two-state model and corresponding radius R (Å) of free-volume positron traps in the full non-linear form τ2 = 0.285 ⋅[1-R/R+5.50+1/2π⋅sin(2πR/R+5.50)]-1 or simplified linear-approximated form τ2 = 0.212 ⋅ (1+0.244 ⋅ R) is proved to account for compositional trends in void volume evolution of chalcogenide semiconductor compounds like binary As-S(Se) glasses. Specific chemical environment of free-volume voids associated with neighbouring network-forming polyhedrons is shown to play a decisive role in this correlation, leading to systematically enhanced estimated void sizes in comparison with typical molecular substrates, such as polymers.
- Subjects
POSITRON annihilation; STATISTICAL correlation; CHALCOGENIDES; SEMICONDUCTORS; SUBSTRATES (Materials science); BINARY mixtures
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, Vol 17, Issue 3, p243
- ISSN
1560-8034
- Publication type
Article