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- Title
Effect of BiO doping on microstructure and electrical properties of ZnO-VO-MnO semiconducting ceramics.
- Authors
Nahm, Choon-W.
- Abstract
In this study, the effect of BiO doping on microstructure and electrical properties of ZnO-VO-MnO semiconducting ceramics was investigated through the sintering temperature as low as 825 °C. Analysis of the microstructure revealed that ZnO-VO-MnO-BiO ceramics consisted of major ZnO grain, and minor such as Zn(VO), ZnVO, VO, and BiVO. As the amount of BiO increased, the densities of sintered pellets increased from 5.55 to 5.46 g/cm, and the average grain size decreased from 5.6 to 3.9 μm until the amount of BiO reaches 0.05 mol%. The breakdown field increased from 4835 to 10,317 V/cm until the amount of BiO reaches 0.025 mol%. The highest nonlinear coefficient was obtained at the ceramics doped with 0.025 mol%, reaching 46.6. The dielectric constant decreased from 1324.5 to 544.7, and dissipation factor decreased from 0.506 to 0.176, until the amount of BiO reaches 0.05 mol%.
- Subjects
SEMICONDUCTOR materials; ELECTRONIC ceramics; SEMICONDUCTOR doping; MICROSTRUCTURE; ELECTRIC properties of solids
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 1, p903
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-5605-z