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- Title
Effect of annealing temperature on dielectric and pyroelectric property of highly (111)-oriented (PbLa)(ZrTi)O thin films.
- Authors
Zhang, Tian-Fu; Tang, Xin-Gui; Liu, Qiu-Xiang; Jiang, Yan-Ping; Xiong, De-Ping; Feng, Zu-Yong; Cheng, Tie-Dong
- Abstract
Highly (111)-oriented lanthanum modified lead zirconate titanate (PbLa)(ZrTi)O thin films with the thickness of 300 nm were fabricated by a sol-gel method. Electrical measurements were conducted on (PbLa)(ZrTi)O thin films. Well-saturated hysteresis loops were achieved with an applied voltage of 19 V. Dielectric constant and dielectric loss as a function of frequency for (PbLa)(ZrTi)O thin films annealed at 670 °C were measured. Dc bias field dependence of dielectric constant and dielectric loss were conducted at room temperature; the dielectric tunability of (PbLa)(ZrTi)O thin film annealed at 670 °C was 20.3 %. The pyroelectric coefficient of films was measured by a dynamic technique. The pyroelectric coefficients of (PbLa)(ZrTi)O thin films annealed at 570, 620 and 670 °C were 208, 244 and 192 μC/m K, respectively. It was found that the pyroelectric property was highly depended on the annealing temperature.
- Subjects
LEAD compounds; ELECTRIC properties of metallic films; PYROELECTRICITY; ANNEALING of metals; THICKNESS measurement; MICROFABRICATION; SOL-gel processes; ELECTRIC measurements
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 3, p1784
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-014-2610-y