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- Title
Characteristics of GaN thin films by inductively coupled plasma etching with Cl/BCl and Cl/Ar.
- Authors
Yang, G.; Chen, P.; Wu, Z.; Yu, Z.; Zhao, H.; Liu, B.; Hua, X.; Xie, Z.; Xiu, X.; Han, P.; Shi, Y.; Zhang, R.; Zheng, Y.
- Abstract
GaN thin films were etched by inductively coupled plasma (ICP). The effects of BCl and Ar with different Cl fraction are studied and compared. The ICP power and RF power are also altered to investigate the different effects by using Cl/BCl or Cl/Ar as etching gases. The etch rate and surface morphology of the etched surface are characterized by using surface profiler, scanning electron microscopy and atomic force microscopy. The root-mean-square roughness values are systematically compared. It is found that the etch rates of Cl/Ar are higher than that of the Cl/BCl in the Cl fraction ranging from 10 to 90%. When the ICP power is increased, the RMS roughness of GaN surface after ICP etching shows reverse trend between Cl/BCl and Cl/Ar gas mixture. The results indicate quite different features using Cl/BCl and Cl/Ar for GaN ICP etcing under the same conditions.
- Subjects
GALLIUM nitride films; PLASMA etching; THIN film research; SCANNING electron microscopy; ROOT-mean-squares
- Publication
Journal of Materials Science: Materials in Electronics, 2012, Vol 23, Issue 6, p1224
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-011-0577-5