We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Stress-enhanced Cu-to-Cu Bonding for MEMS Packaging.
- Authors
Jenn-Ming Song; Sin-Yong Liang; Zong-Yu Xie; Po-Hao Chiang; Shang-Kun Huang; Ying-Ta Chiu; David Tarng; Chih-Pin Hung; Jing-Yuan Lin
- Abstract
To replace Al--Ge eutectic bonding, low-temperature direct Cu-to-Cu bonding was developed in this study. Lattice distortion and thus a hardened Cu subsurface conducted by air plasma bombardment, instead of surface activation, contributed to a compressive residual stress component and an accelerated Cu atom diffusion. This gave rise to a significant improvement in direct Cu bonding strength. Subjected to 3-min plasma exposure and the following deoxidation treatment using catalyzed formic acid vapor, robust Cu-to-Cu bonding with the joint strength up to 31.7 MPa can be achieved when bonded at 250 °C for 5 min under a loading pressure of 10 MPa in N2.
- Subjects
DIFFUSION; EUTECTIC bonding process; BOMBARDMENT; COPPER bonding; RESIDUAL stresses
- Publication
Sensors & Materials, 2018, Vol 30, Issue 12, Part 2, p2889
- ISSN
0914-4935
- Publication type
Article
- DOI
10.18494/SAM.2018.1948