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- Title
Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells.
- Authors
Rong, X.; Wang, X. Q.; Chen, G.; Zheng, X. T.; Wang, P.; Xu, F. J.; Qin, Z. X.; Tang, N.; Chen, Y. H.; Sang, L. W.; Sumiya, M.; Ge, W. K.; Shen, B.
- Abstract
AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3-5 μm) is achieved in such nitride semiconductors.
- Subjects
SEMICONDUCTOR quantum wells; GALLIUM nitride; ALUMINUM gallium nitride; ELECTRIC fields; PHOTOCURRENTS
- Publication
Scientific Reports, 2015, p14386
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep14386