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- Title
Quantum Anomalous Hall Effect in Graphene-based Heterostructure.
- Authors
Zhang, Jiayong; Zhao, Bao; Yao, Yugui; Yang, Zhongqin
- Abstract
Quantum anomalous Hall (QAH) effect, with potential applications in low-power-consumption electronics, is predicted in the heterostructure of graphene on the (001) surface of a real antiferromagnetic insulator RbMnCl3, based on density-functional theory and Wannier function methods. Due to the interactions from the substrate, a much large exchange field (about 280 meV) and an enhanced Rashba spin-orbit coupling are induced in graphene, leading to a topologically nontrivial QAH gap opened in the system. The avenues of enhancing the nontrivial gap are also proposed, from which nearly a gap one order large is achieved. Our work demonstrates that this graphene-based heterostructure is an appropriate candidate to be employed to experimentally observe the QAH effect and explore the promising applications.
- Subjects
GRAPHENE crystallography; QUANTUM Hall effect; ANOMALOUS Hall effect; HETEROSTRUCTURES; RASHBA effect; ANTIFERROMAGNETIC materials; DENSITY functional theory
- Publication
Scientific Reports, 2015, p10629
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep10629