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- Title
Tin-Incorporation Induced Changes in the Microstructural, Optical, and Electrical Behavior of Tungsten Oxide Nanocrystalline Thin Films Grown Via Spray Pyrolysis.
- Authors
Mukherjee, Ramnayan; Prajapati, C.; Sahay, P.
- Abstract
Undoped and Sn-doped WO thin films were grown on cleaned glass substrates by chemical spray pyrolysis, using ammonium tungstate (NH)WO as the host precursor and tin chloride (SnCl·5HO) as the source of dopant. The XRD spectra confirm the monoclinic structure with a sharp narrow peak along (200) direction along with other peaks of low relative intensities for all the samples. On Sn doping, the films exhibit reduced crystallinity relative to the undoped film. The standard deviation for relative peak intensity with dopant concentration shows enhancement in heterogeneous nucleation growth. As evident from SEM images, on Sn doping, appearance of island-like structure (i.e., cluster of primary crystallites at few places) takes place. The transmittance has been found to decrease in all the Sn-doped films. The optical band gap has been calculated for both direct and indirect transitions. On Sn doping, the direct band gap shows a red shift and becomes 2.89 eV at 2 at.% doping. Two distinct peaks, one blue emission at 408 nm and other green emission at 533 nm, have been found in the PL spectra. Electrical conductivity has been found to increase with Sn doping.
- Subjects
ELECTRIC properties of thin films; THIN films; TUNGSTEN oxides; AMMONIUM paratungstate; PYROLYSIS; TIN chlorides
- Publication
Journal of Thermal Spray Technology, 2014, Vol 23, Issue 8, p1445
- ISSN
1059-9630
- Publication type
Article
- DOI
10.1007/s11666-014-0134-x