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- Title
Solutions for the 100nm node with ultrathin silicon nitride gates.
- Authors
Levy, Sagy; Boom, Robin; Lam, James; Kepten, Avishai
- Abstract
Presents a gate dielectric composed of an oxide-on-nitride stack that provides two orders of magnitude lower leakage current than thermal oxide, minimal saturation current degradation, boron penetration suppression and improved reliability. Experimental setup; Process steps that were studied in order to determine the sensitivity of the film parameters to the different process steps; Conclusion.
- Subjects
DIELECTRICS; ELECTRICAL engineering materials; SILICON nitride
- Publication
Solid State Technology, 2001, Vol 44, Issue 4, p75
- ISSN
0038-111X
- Publication type
Article