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- Title
Bismuth nanolines on Si(001) and their influence on mesoscopic surface structure.
- Authors
MacLeod, J. M.; Lima, C. P.; Miwa, R. H.; Srivastava, G. P.; McLean, A. B.
- Abstract
Experimental studies of Bi heteroepitaxy on Si(001) have recently uncovered a self-organised nanoline motif which has no detectable width dispersion. The Bi lines can be grown with an aspect ratio that is greater than 350 : 1. This paper describes a study of the nanoline geometry and electronic structure using a combination of scanning tunneling microscopy (STM) and ab initio theoretical methods. In particular, the effect that the lines have on Si(001) surface structure at large length scales, l > 100 nm, is studied. It has been found that Bi line growth on surfaces that have regularly spaced single height steps results in a 'preferred' domain orientation. MST/6085
- Subjects
NANOWIRES; BISMUTH; EPITAXY; CRYSTAL growth; MESOSCOPIC phenomena (Physics)
- Publication
Materials Science & Technology, 2004, Vol 20, Issue 8, p951
- ISSN
0267-0836
- Publication type
Article
- DOI
10.1179/026708304225019894