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- Title
Investigation on Oxide Growth Mechanism of PECVD Silicon Carbide Films.
- Authors
Choi, W. K.; Leoy, C. C.; Lee, L. P.
- Abstract
The effect of the Si-C, Si-CH[sub 3], C-H[sub n], Si-H and Si dangling bonds on the oxidation process was investigated by monitoring the changes of these bands as a function of oxidation temperature or duration using the infrared spectroscopy technique. We concluded that the activation energy obtained from the linear regime of the oxide growth is related to the C-H[sub n] bonds. We suggested that most of the C-H[sub n] bonds were bonded to Si with n = 3, that gave rise to voids to facilitate the oxidation of amorphous silicon carbide films. The effect of the Si-C, Si-CH[sub 3], C-H[sub n], Si-H and Si dangling bonds on the oxidation process was investigated by monitoring the changes of these bands as a function of oxidation temperature or duration using the infrared spectroscopy technique. We concluded that the activation energy obtained from the linear regime of the oxide growth is related to the C-H[sub n] bonds. We suggested that most of the C-H[sub n] bonds were bonded to Si with n = 3, that gave rise to voids to facilitate the oxidation of amorphous silicon carbide films.
- Subjects
SILICON carbide; THIN films; OXIDATION
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, Vol 16, Issue 6/7, p1062
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979202010865