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- Title
Improving RF Characteristics of MEMS Capacitive Shunt Switches.
- Authors
Mafinejad, Yasser; Mafinezhad, Khalil; Kouzani, Abbas Z.
- Abstract
This paper presents a new RF MEMS electrostatic switch with low actuation voltage. Usually, electrostatic switches with low pull-down voltage have large up-state capacitance deteriorating their RF characteristics. The proposed switch enjoys good RE characteristics for a frequency band of larger than one octave, and a low actuation voltage of 9 volts. Low actuation voltage could be achieved by decreasing the gap or increasing the area of the beam. In both cases, the up-stale capacitance enlarges deteriorating the RE characteristics. In this work, regardless of the value of Cu, the height of the gap is chosen by considering the reliability and ljfe cycle of the switch. Then, the area is calculated for the chosen gap and the desired actuation voltage. The switch is a π circuit consisting of two shunt switches and a short transmission line in between them. The key aspect of this design is the optimization of the length and the characteristic impedance of the line to suit fabrication constraints and desired frequency band The switch is simulated and its RE characteristics evaluated An excellent improvement of the RE characteristics of the up-state position is observed For the down-state position, a superb isolation is observed.
- Subjects
MICROELECTROMECHANICAL systems; ELECTROMECHANICAL devices; RADIO frequency; FREQUENCIES of oscillating systems; RADIO measurements; RADIO waves; ELECTRIC lines; ELECTRIC power systems; ELECTRIC power distribution; ELECTRIC power transmission
- Publication
International Review on Modelling & Simulations, 2009, Vol 2, Issue 4, p401
- ISSN
1974-9821
- Publication type
Article