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- Title
H<sub>2</sub>O/O<sub>2</sub> Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells.
- Authors
Uzum, Abdullah; Kanda, Hiroyuki; Noguchi, Takuma; Nakazawa, Yuya; Taniwaki, Shota; Hotta, Yasushi; Haruyama, Yuichi; Shibayama, Naoyuki; Ito, Seigo
- Abstract
Aluminum acetylacetonate-based AlOx thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O2, or water vapor (H2O/O2) for 15 or 120 min. XPS analysis confirms the AlOx formation and reveals a high intensity of interfacial SiOx at the AlOx/Si interface of processed wafers. Ambient H2O/O2 was found to be more beneficial for the activation of introduced AlOx passivation films which offers high lifetime improvements with a low thermal budget. Carrier lifetime measurements provides that symmetrically coated wafers reach 119.3 μs and 248.3 μs after annealing in ambient H2O/O2 for 15 min and 120 min, respectively.
- Subjects
SILICON solar cells; PASSIVATION; THIN films; SPIN coating; ALUMINUM oxide films; SILICON films
- Publication
International Journal of Photoenergy, 2019, p1
- ISSN
1110-662X
- Publication type
Article
- DOI
10.1155/2019/4604932