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- Title
Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO 2 Thin-Film Transistors.
- Authors
Kim, Hyeon-Joong; Kim, Do-Won; Lee, Won-Yong; Lee, Sin-Hyung; Bae, Jin-Hyuk; Kang, In-Man; Jang, Jaewon
- Abstract
In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.
- Subjects
TRANSISTORS; SEMICONDUCTOR films; THIN film transistors; BOND strengths; DOPING agents (Chemistry)
- Publication
Electronics (2079-9292), 2021, Vol 10, Issue 14, p1629
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics10141629