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- Title
Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy.
- Authors
Pham, Kim; Choi, Minsu; Tran, Cao; Nguyen, Trung; Hieu Le; Choi, Taekjib; Lee, Jaichan; Phan, Bach
- Abstract
Reversible resistive switching of CrO films was studied by use of conductive atomic force microscopy. Resistive switching in CrO films occurs as a result of Ag filament paths formed during electrochemical redox reactions. A large memory density of 100 Tbit/sq. inch was achieved with a small filament diameter of 2.9 nm under the action of a compliance current of 10 nA. A fast switching speed of 10 ns, high scalability, and low set/reset currents suggest that CrO-based resistive memory is suitable for nanoscale devices.
- Subjects
THIN film research; ATOMIC force microscopy; CHROMIUM oxide; SWITCHING circuits; OXIDATION-reduction reaction
- Publication
Journal of Electronic Materials, 2015, Vol 44, Issue 10, p3395
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-015-3889-z