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- Title
Superior Suppression of Gate Current Leakage in Al<sub>2</sub>O<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub> Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors.
- Authors
Wang, C. X.; Maeda, N.; Hiroki, M.; Tawara, T.; Makimoto, T.; Kobayahsi, T.; Enoki, T.
- Abstract
AlGaN/GaN-based metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) with Al2O3/Si3N4 bilayer as insulator have been investigated in detail, and compared with the conventional HFET and Si3N4-based MIS-HFET devices. Al2O3/Si3N4 bilayer-based MIS-HFETs exhibited much lower gate current leakage than conventional HFET and Si3N4-based MIS devices under reverse gate bias, and leakage as low as 1 x 10-11 A/mm at -15 V has been achieved in Al2O3/Si3N4-based MIS devices. By using ultra-thin Al2O3/Si3N4 bilayer, very high maximum transconductance of more than 180 mS/mm with ultra-low gate leakage has been obtained in the MIS-HFET device with gate length of 1.5 µm, a reduction less than 5% in maximum transconductance compared with the conventional HFET device. This value was much smaller than the more than 30% reduction in the Si3N4-based MIS device, due to the employment of ultra-thin bilayer with large dielectric constant and the large conduction band offset between Al2O3 and nitrides. This work demonstrates that Al2O3/Si3N4 bilayer insulator is a superior candidate for nitrides-based MIS-HFET devices.
- Subjects
ALUMINUM compounds; SILICON compounds; GALLIUM compounds; SEMICONDUCTORS; TRANSISTORS; ELECTRONICS
- Publication
Journal of Electronic Materials, 2005, Vol 34, Issue 4, p361
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-005-0111-8