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- Title
Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium.
- Authors
Schiavon, Dario; Litwin-Staszewska, Elżbieta; Jakieła, Rafał; Grzanka, Szymon; Perlin, Piotr
- Abstract
The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.
- Subjects
GERMANIUM; SURFACE morphology; LOW temperatures; INDIUM; HIGH temperatures; SEMIMETALS; INDIUM gallium nitride
- Publication
Materials (1996-1944), 2021, Vol 14, Issue 2, p354
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma14020354