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- Title
Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices.
- Authors
Jo, Jeong-Wan; Kang, Jingu; Kim, Kyung-Tae; Kang, Seung-Han; Shin, Jae-Cheol; Shin, Seung Beom; Kim, Yong-Hoon; Park, Sung Kyu
- Abstract
The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al2O3) thin films for high-performance OTFTs. Nanocluster-based Al2O3 films fabricated by highly energetic photochemical activation, which allows low-temperature processing, are compared to the conventional nitrate-based Al2O3 films. A wide array of spectroscopic and surface analyses show that ultralow-temperature photochemical activation (<60 °C) induces the decomposition of chemical impurities and causes the densification of the metal-oxide film, resulting in a highly dense high-k Al2O3 dielectric layer from Al-13 nanocluster-based solutions. The fabricated nanocluster-based Al2O3 films exhibit a low leakage current density (<10−7 A/cm2) at 2 MV/cm and high dielectric breakdown strength (>6 MV/cm). Using this dielectric layer, precisely aligned microrod-shaped 2,7-dioctyl[1]benzothieno [3,2-b][1] benzothiophene (C8-BTBT) single-crystal OTFTs were fabricated via solvent vapor annealing and photochemical patterning of the sacrificial layer.
- Subjects
DIELECTRIC materials; DIELECTRICS; ELECTRONIC equipment; DIELECTRIC strength; DIELECTRIC breakdown; ANODIC oxidation of metals
- Publication
Materials (1996-1944), 2020, Vol 13, Issue 23, p5571
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma13235571