We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability.
- Authors
Mitrofanov, Kirill V.; Saito, Yuta; Miyata, Noriyuki; Fons, Paul; Kolobov, Alexander V.; Tominaga, Junji
- Abstract
Ge–Sb–Te alloy based phase‐change memory devices have recently been shown to be switchable in a bipolar mode. However, to date bipolar switching has only been demonstrated at relatively low speeds (on the order of tens of µs), and with endurance limited to 104 switching cycles. In this work, in lieu of a Ge–Sb–Te alloy, fast and durable bipolar switching is demonstrated in interfacial phase change memory (iPCM). It is revealed that in iPCM devices, bipolar switching can be carried out at least a factor of 1000 times faster and with at least 1000 times greater endurance than in conventional Ge–Sb–Te alloy based phase‐change devices. Additionally, bipolar switching was found to exhibit a larger RESET to SET resistance ratio and lower power consumption compared to conventional Ge–Sb–Te alloy based devices.
- Subjects
TELLURIUM; PHASE change memory
- Publication
Physica Status Solidi - Rapid Research Letters, 2019, Vol 13, Issue 8, pN.PAG
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.201900105