We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two‐Dimensional and Oxide/Two‐Dimensional Transition Metal Dichalcogenide Diodes.
- Authors
Choi, Wonjun; Hong, Sungjae; Jeong, Yeonsu; Cho, Yongjae; Shin, Hyung Gon; Park, Ji Hoon; Yi, Yeonjin; Im, Seongil
- Abstract
Among many of 2D semiconductor‐based devices, type III PN junction diodes are given special attentions due to their unique function, negative differential resistance (NDR). However, it has been found uneasy to achieve well‐matched type III PN junctions from 2D–2D van der Waals heterojunctions. Here, the authors present other alternatives of type III heterojunctions, using 2D p‐MoTe2/organic n‐type dipyrazino[2,3‐f:2′,3′‐h]quinoxaline‐2,3,6,7,10,11‐hexacarbonitrile (HAT‐CN) and 2D p‐WSe2/n‐MoOx systems. Those junction diodes appear to well‐demonstrate static and dynamic NDR behavior via resonant tunneling and electron–hole recombination. Extended to an inverter circuit, p‐MoTe2/n‐HAT‐CN diode enables multilevel inverter characteristics as monolithically integrated with p‐MoTe2 channel field effect transistor. The same NDR diode shows dynamic LC oscillation behavior under a constant DC voltage, connected to an external inductor. From p‐WSe2/n‐MoOx oxide diode, similar NDR behavior to those of p‐MoTe2/n‐HAT‐CN is again observed along with LC oscillations. The authors attribute these visible oscillation results to high peak‐to‐valley current ratios of their organic or oxide/2D heterojunction diodes.
- Subjects
TRANSITION metal oxides; TRANSITION metals; DIODES; FIELD-effect transistors; ELECTRON-hole recombination; OSCILLATIONS; VAN der Waals forces
- Publication
Advanced Functional Materials, 2021, Vol 31, Issue 9, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202009436