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- Title
Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures.
- Authors
Yang, Liuyun; Wang, Xinqiang; Wang, Tao; Wang, Jingyue; Zhang, Wenjie; Quach, Patrick; Wang, Ping; Liu, Fang; Li, Duo; Chen, Ling; Liu, Shangfeng; Wei, Jiaqi; Yang, Xuelin; Xu, Fujun; Tang, Ning; Tan, Wei; Zhang, Jian; Ge, Weikun; Wu, Xiaosong; Zhang, Chi
- Abstract
Ultrathin barrier AlN/GaN heterostructure with record low sheet resistance of 82 Ω sq−1 is achieved by molecular beam epitaxy, where Shubnikov‐de Haas oscillations (SdHOs) and quantum Hall effect (QHE) of two‐dimensional electron gas (2DEG) are observed. The fast Fourier transform analysis of the SdHOs demonstrates a three‐subband occupation in the triangle quantum well for the first time, with the electron density of n1= 2.2 × 1013 cm−2, n2= 2.3 × 1012 cm−2, and n3= 8.8 × 1011 cm−2, respectively, and the corresponding energy of 265, 28, and 11 meV below Fermi level. The three‐subband QHE with a superposed feature is also demonstrated for the first time in AlN/GaN heterostructure, with large filling factors at high electron densities. By analyzing the first subband as the dominant part of the superposed QHE, the transport physics of a special magneto‐intersubband scattering is revealed. These results contribute to a better understanding of the quantum physics for 2DEG, leading to a versatile functionality for AlN/GaN devices.
- Subjects
TWO-dimensional electron gas; ELECTRON gas; QUANTUM theory; QUANTUM Hall effect; MOLECULAR beam epitaxy; FAST Fourier transforms; ELECTRON density
- Publication
Advanced Functional Materials, 2020, Vol 30, Issue 46, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202004450