Back to matchesWe found a matchYour institution may have rights to this item. Sign in to continue.TitleHigh Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing.AuthorsXu, Ru; Chen, Peng; Zhou, Jing; Li, Yimeng; Li, Yuyin; Zhu, Tinggang; Cheng, Kai; Chen, Dunjun; Xie, Zili; Ye, Jiandong; Liu, Bin; Xiu, Xiangqian; Han, Ping; Shi, Yi; Zhang, Rong; Zheng, YoudouPublicationSmall, 2022, Vol 18, Issue 37, p1ISSN1613-6810Publication typeArticleDOI10.1002/smll.202107301