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- Title
Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE.
- Authors
Chen, Wei-Chun; Wu, Yue-Han; Peng, Chun-Yen; Hsiao, Chien-Nan; Chang, Li
- Abstract
InAlN films were deposited on Si(100) substrate using metal-organic molecular beam epitaxy. We investigated the effect of the trimethylindium/trimethylaluminum (TMIn/TMAl) flow ratios on the structural, morphological, and optical properties of InAlN films. Surface morphologies and microstructure of the InAlN films were measured by atomic force microscopy, scanning electron microscopy, X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively. Optical properties of all films were evaluated using an ultraviolet/visible/infrared (UV/Vis/IR) reflection spectrophotometer. XRD and TEM results indicated that InAlN films were preferentially oriented in the c-axis direction. Besides, the growth rates of InAlN films were measured at around 0.6 μm/h in average. Reflection spectrum shows that the optical absorption of the InAlN films redshifts with an increase in the In composition.
- Subjects
INDIUM compounds; ALUMINUM compounds; CRYSTAL structure; OPTICAL properties of metallic films; CRYSTAL growth; MOLECULAR beam epitaxy
- Publication
Nanoscale Research Letters, 2014, Vol 9, Issue 1, p1
- ISSN
1931-7573
- Publication type
Article
- DOI
10.1186/1556-276X-9-204