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- Title
Improvement of Boron Dopant Quantification Accuracy in Atom Probe Tomography via High Electric Field Analysis.
- Authors
Guerguis, Bavley; Cuduvally, Ramya; Morris, Richard J H; Arcuri, Gabriel; Langelier, Brian; Bassim, Nabil
- Abstract
This article discusses the challenges of accurately quantifying boron dopants in atom probe tomography (APT) and presents a study that investigates the severity of detection losses and profile shape integrity under different electric field analysis conditions. The study uses a well-characterized baseline sample and shows that a high apex electric field enhances quantification accuracy, profile shape integrity, and lateral resolution. The findings offer pathways towards best practices for accurate and repeatable measurements in the semiconductor industry.
- Subjects
ATOM-probe tomography; SECONDARY ion mass spectrometry; ELECTRIC fields; LASER pulses; SEMICONDUCTOR industry
- Publication
Microscopy & Microanalysis, 2024, Vol 30, p1
- ISSN
1431-9276
- Publication type
Article
- DOI
10.1093/mam/ozae044.036