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- Title
Edge Photoluminescence of Single-Crystal Silicon at Room Temperature.
- Authors
Gule, E. G.; Kaganovich, E. B.; Kizyak, I. M.; Manoilov, E. G.; Svechnikov, S. V.
- Abstract
The edge photoluminescence of single-crystal silicon (c-Si) with a peak at ∼1.09 eV at room temperature is observed for structures that consist of nanocrystalline silicon (nc-Si) and c-Si. The structures are obtained by pulsed-laser deposition of an nc-Si film onto a c-Si substrate. The photoluminescence signal increases as both the density of surface states at the nc-Si/c-Si boundary and the scattering of the edge emission from c-Si in the nc-Si film decreases. © 2005 Pleiades Publishing, Inc.
- Subjects
PHOTOLUMINESCENCE; RESONANCE lamps; LUMINESCENCE; OPTICAL resonance; LIGHT sources; SILICON; LASERS; TEMPERATURE
- Publication
Semiconductors, 2005, Vol 39, Issue 4, p406
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1900253