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- Title
Accumulation of Majority Charge Carriers in GaAs Layers Containing Arsenic Nanoclusters.
- Authors
Brunkov, P. N.; Chaldyshev, V. V.; Chernigovskiı, A. V.; Suvorova, A. A.; Bert, N. A.; Konnikov, S. G.; Preobrazhenskiı, V. V.; Putyato, M. A.; Semyagin, B. R.
- Abstract
The accumulation of electrons and holes in GaAs layers that contained As clusters and were sandwiched between n- and p-type buffer GaAs layers was revealed by capacitance-voltage measurements. As a result of majority-carrier accumulation, expansive depletion regions are formed in the adjoining buffer layers. Simulation of the capacitance-voltage characteristics, based on a numerical solution of the Poisson equation, shows that the accumulated charge density is ∼1 × 10[sup 12] cm[sup -2], which is comparable with the concentration of As nanoclusters determined by transmission electron microscopy.
- Subjects
HOLES (Electron deficiencies); ELECTRONS; GALLIUM arsenide; POISSON'S equation
- Publication
Semiconductors, 2000, Vol 34, Issue 9, p1068
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1309425