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- Title
A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate.
- Authors
Mikhrin, S. S.; Zhukov, A. E.; Kovsh, A. R.; Maleev, N. A.; Ustinov, V. M.; Shernyakov, Yu. M.; Kayander, I. N.; Kondrat’eva, E. Yu.; Livshits, D. A.; Tarasov, I. S.; Maksimov, M. V.; Tsatsul’nikov, A. F.; Ledentsov, N. N.; Kop’ev, P. S.; Bimberg, D.; Alferov, Zh. I.
- Abstract
Spatially single-mode lasing in the wavelength range of 1.25-1.28 µm was accomplished in injection lasers on GaAs substrates. The peak output power is 110 mW at room temperature, and the differential quantum efficiency amounts to 37%. The active region of the laser is formed by an array of self-organizing InAs quantum dots.
- Subjects
GALLIUM arsenide semiconductors; INDIUM alloys; QUANTUM dots
- Publication
Semiconductors, 2000, Vol 34, Issue 1, p119
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1187954