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- Title
Single-ion dosemeter based on floating gate memories.
- Authors
Cellere, G.; Paccagnella, A.; Visconti, A.; Bonanomi, M.; McNulty, P. J.
- Abstract
Floating Gate (FG) nonvolatile memories are based on a tiny polysilicon layer (the FG) which can be permanently charged with electrons or holes, thus changing the threshold voltage of a MOSFET. Every time a FG is hit by a high energy ion, it experiences a charge loss, depending on the ion linear energy transfer (LET) and on the transistor geometrical and electrical characteristics. This paper discusses the opportunities to use this devices as single an ion dosemeter with sub-micrometer spatial resolution and capable of distinguish the impinging ion LET.
- Subjects
TRANSISTORS; MICROMETERS; LINEAR energy transfer; NUCLEAR physics; STOPPING power (Nuclear physics)
- Publication
Radiation Protection Dosimetry, 2006, Vol 122, Issue 1-4, p457
- ISSN
0144-8420
- Publication type
Article
- DOI
10.1093/rpd/ncl394