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- Title
52.3: Development of Back-channel-etched TFT Using C-Axis Aligned Crystalline In-Ga-Zn-Oxide.
- Authors
Koezuka, Junichi; Okazaki, Kenichi; Hirohashi, Takuya; Takahashi, Masahiro; Adachi, Shunsuke; Tsubuku, Masashi; Yamazaki, Shunpei; Kanzaki, Yohsuke; Matsukizono, Hiroshi; Kaneko, Seiji; Mori, Shigeyasu; Matsuo, Takuya
- Abstract
We have fabricated a back-channel-etched TFT using the CAAC-IGZO film that we developed. As a factor of success in manufacturing stable back-channel-etched TFTs, it is considered that CAAC-IGZO has a strong structure because of its crystallinity. For verification, we have compared the cohesive energy of c-IGZO and that of a-IGZO.
- Subjects
CRYSTALLINITY; MANUFACTURING processes; CRYSTALS; CRYSTAL structure; FABRICATION (Manufacturing)
- Publication
SID Symposium Digest of Technical Papers, 2013, Vol 44, Issue 1, p723
- ISSN
0097-966X
- Publication type
Other
- DOI
10.1002/j.2168-0159.2013.tb06315.x