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- Title
Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE.
- Authors
Jmerik, V. N.; Shubina, T. V.; Nechaev, D. V.; Semenov, A. N.; Kirilenko, D. A.; Davydov, V. Yu.; Smirnov, A. N.; Eliseev, I. A.; Posina, G.; Ivanov, S. V.
- Abstract
We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (μ-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the μ-CPSSs and followed by growth of 1-μm-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000-) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.
- Subjects
GALLIUM nitride; NANORODS; MOLECULAR beam scattering; NUCLEATION; PHOTOLUMINESCENCE
- Publication
Semiconductors, 2018, Vol 52, Issue 5, p667
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782618050123