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- Title
Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects.
- Authors
Zabavichev, I.; Obolenskaya, E.; Potekhin, A.; Puzanov, A.; Obolensky, S.; Kozlov, V.
- Abstract
The distributions of the radii of subclusters of radiation-induced defects and of the distances between the cores of these subclusters are calculated for Si, GaAs, and GaN. The features of the transport of hot charge carriers in the above materials upon irradiation with neutrons are discussed. A burst in the velocity of electrons in Si, GaAs, InGaAs, and GaN before and after irradiation is calculated for the first time; also, the extent of manifestation of the above effect in different semiconductor materials is compared.
- Subjects
SEMICONDUCTORS; CONDENSED matter physics; GALLIUM arsenide transistors; IRRADIATION; RADIATION
- Publication
Semiconductors, 2017, Vol 51, Issue 11, p1435
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782617110288