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- Title
Characterization of tunable band gap aluminum indium oxide films prepared on SiO (0001) by MOCVD.
- Authors
Du, Xuejian; Li, Zhao; Luan, Caina; Wang, Weiguang; Wang, Mingxian; Ma, Jin
- Abstract
The ternary tunable band gap AlInO films with different Al compositions of x [Al/(Al + In) atomic ratio] were prepared on the SiO (0001) substrates by the metal organic chemical vapor deposition method at 650 °C. The influence of different Al contents on the structural, electrical and optical properties of the films was investigated in detail. Structural analyses revealed a phase transition from cubic InO with high crystalline quality and preferred orientation alone (111) to amorphous as the Al content increased. The lowest resistivity of 2.15 × 10 Ω cm with a hall mobility of 13.58 cm V s and a carrier concentration of 3.38 × 10 cm were obtained for the sample with x = 0.2. The average transmittances of all the samples in the visible range exceeded 82 %. The optical band gap of the films could be modulated monotonically from 3.74 to 5.91 eV as the x value increased from 0 to 0.9.
- Subjects
BAND gaps; INDIUM oxide; ALUMINUM indium nitride; METAL organic chemical vapor deposition; TRANSMITTANCE (Physics)
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 1, p599
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-3794-5