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- Title
Influence of rapid thermal annealing on the process of aluminum induced crystallization of amorphous Si.
- Authors
Zhai, Xiao-Li; Tan, Rui-Qin; Dai, Shi-Xun; Wang, Wei-Yan; Huang, Jin-Hua; Song, Wei-Jie
- Abstract
The effects of annealing methods on the crystallization process and microstructure of polycrystalline silicon (poly-Si) films obtained by aluminum-induced crystallization (AIC) of amorphous Si (a-Si) films were comparatively investigated. Glass/Al/a-Si structures were annealed by rapid thermal annealing (RTA) and conventional furnace at 500 °C for different times in Ar. As compared to furnace annealing, AIC of a-Si films annealed by RTA possesses a shorter period of nucleation time, a higher nucleation density and reduces the process time to form continuous poly-Si films. It is revealed that the continuous Si films obtained by both RTA and conventional furnace annealing are polycrystalline in nature, exhibiting good microstructures with Raman peaks at 518 cm and full-width at half-maximums of 6.43-6.48 cm.
- Subjects
ALUMINUM crystals; THERMAL analysis; METALLIC glasses; MICROSTRUCTURE; POLYCRYSTALLINE silicon; SILICON films
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 7, p2379
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-013-1105-6