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- Title
Dilute (In,Ga)(As,N) thin films grown by molecular beam epitaxy on (100) and non-(100) GaAs substrates: a Raman-scattering study.
- Authors
Ibáñez, Jordi; Alarcón-Lladó, Esther; Cuscó, Ramon; Artús, Lluís; Henini, Mohamed; Hopkinson, Mark
- Abstract
We use Raman scattering to investigate a series of In x Ga1– x As1– y N y epilayers ( x ∼ 20% and y ∼ 3%) coherently grown on (100) and on ( N11) GaAs substrates ( N = 1, 3, 4, and 5). We use biaxial-strain theory to evaluate the effect of N alloying on the frequency of the GaAs-like phonon optical modes of dilute InGaAsN. We find that N alloying reduces the TO–LO splitting of the GaAs-like modes. We investigate the effect of substrate orientation on the N-related vibrational modes. Our results suggest that the growth direction does not affect substantially the local bonding of N atoms in InGaAsN.
- Subjects
SCATTERING (Physics); COLLISIONS (Nuclear physics); COLLISIONS (Physics); MULTIPLE scattering (Physics); SPALLATION (Nuclear physics); QUANTUM scattering; DUALITY (Nuclear physics); ATOMS; PHYSICAL &; theoretical chemistry; CONSTITUTION of matter; STEREOCHEMISTRY
- Publication
Journal of Materials Science: Materials in Electronics, 2009, Vol 20, p116
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9462-7