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- Title
Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes.
- Authors
Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kim, Jihyun; Ren, F.; Thaler, G. T.; Frazier, R. M.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Buyanova, I. A.; Rudko, G. Y.; Chen, W. M.; C.-C. Pan, W. M.; G.-T. Chen, W. M.; J.-I. Chyi, W. M.; Zavada, J. M.
- Abstract
Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called "spin-LEDs"). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.
- Subjects
LUMINESCENCE; ELECTRICITY; LIGHT emitting diodes; MAGNETIC fields; POLARIZATION (Electricity)
- Publication
Journal of Electronic Materials, 2004, Vol 33, Issue 3, p241
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-004-0186-7