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- Title
Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications.
- Authors
Ziti, Ahmed; Hartiti, Bouchaib; Belafhaili, Amine; Labrim, Hicham; Fadili, Salah; Ridah, Abderraouf; Tahri, Mounia; Thevenin, Philippe
- Abstract
Quaternary semiconductor Cu2NiSnS4 thin film was made by the sol–gel method associated with dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy-dispersive X-ray spectroscope (EDS), UV–Visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu2NiSnS4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increases from 6 to 9 with augmentation of dip-coating cycle. Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm−1. EDS investigations showed near-stoichiometry of CNTS sample deposited at five cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV–Vis spectroscopy indicated that the optical absorption coefficient values are larger than 104 cm−1. Estimated band gap energy of CNTS absorber layers decreases from 1.64 to 1.5 eV as dip-coating cycle increased. The electrical conductivity of CNTS thin films increases from 0.19 to 4.16 Ω cm - 1 . These characteristics are suitable for solar cells applications.
- Subjects
THIN films; SEMICONDUCTOR thin films; SCANNING electron microscopes; BAND gaps; LIGHT absorption; ELECTRIC conductivity
- Publication
Journal of Materials Science: Materials in Electronics, 2021, Vol 32, Issue 12, p16726
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-021-06230-9