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- Title
Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection.
- Authors
Maruyama, Satoshi; Hizawa, Takeshi; Takahashi, Kazuhiro; Sawada, Kazuaki
- Abstract
We developed a Fabry-Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance change, and photocurrent change. A small readout photocurrent was processed by an integrated source follower circuit. The movable film of the sensor was a 350-nm-thick polychloro-para-xylylene membrane with a diameter of 100 μm and an air gap of 300 nm. The linearity of the integrated source follower circuit was obtained. We demonstrated a gas response using 80-ppm ethanol detected by small membrane deformation of 50 nm, which resulted in an output-voltage change with the proposed high-efficiency transduction.
- Subjects
METAL oxide semiconductor field-effect transistor circuits; FABRY-Perot interferometers; INTERFEROMETRY; MICROELECTROMECHANICAL systems; COMPLEMENTARY metal oxide semiconductors; STRAINS &; stresses (Mechanics); NANOELECTROMECHANICAL systems
- Publication
Sensors (14248220), 2018, Vol 18, Issue 1, p138
- ISSN
1424-8220
- Publication type
Article
- DOI
10.3390/s18010138