We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Effect and extraction of series resistance in Al<sub>2</sub>O<sub>3</sub>-InGaAs MOS with bulk-oxide trap.
- Authors
B. Yu; Y. Yuan; H.-P. Chen; J. Ahn; McIntyre, P. C.; Y. Taur
- Abstract
The effect of parasitic series resistance in the accumulation region has been investigated under the framework of the distributed bulk-oxide trap model. It is shown that while the series resistance may be too small to impact the total capacitance, it can have a significant effect on the total conductance by adding a term ∝ ω2. It leads to a proposal of an extraction method for series resistance. The enhanced bulk-oxide trap model with series resistance as well as dielectric leakage can explain the uncommon conductance frequency dispersion data for an Al2O3-InGaAs MOS capacitor with 2.5 nm thin Al2O3 layer.
- Subjects
METAL oxide semiconductor field-effect transistors; INDIUM gallium arsenide; METAL oxide semiconductors; ELECTRIC resistance; ELECTRIC conductivity
- Publication
Electronics Letters (Wiley-Blackwell), 2013, Vol 49, Issue 7, p1
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2013.0433