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- Title
A microbolometer fabrication process using polymorphous silicon-germanium films (pm-Si<sub> x</sub>Ge<sub> y</sub>:H) as thermosensing material.
- Authors
Calleja, Cesar; Torres, Alfonso; Moreno, Mario; Rosales, Pedro; Sanz‐Pascual, María Teresa; Velázquez, Miguel
- Abstract
For uncooled resistive microbolometers, the properties that are necessary in the thermosensing materials in order to obtain high responsivity and detectivity are a high temperature coefficient of resistivity (TCR), low resistivity, and low noise. The most used materials for these applications are boron-doped amorphous silicon (a-Si:H,B) and amorphous silicon-germanium (a-Si xGe y:H), however, those materials present some drawbacks such as relatively low TCR values and poor stability. In this work, we performed the deposition and electrical characterization of hydrogenated polymorphous silicon-germanium films (pm-Si xGe y:H) deposited by plasma-enhanced chemical vapor deposition (PECVD), using a standard frequency of 13.56 MHz. We found that these films have high values of activation energy ( Ea = 6.2 eV), a thermal coefficient of resistance (TCR = 8% K−1), and room temperature conductivity ( σRT = 2.38 × 10−8 Ω−1 cm−1), which are superior characteristics to those of microbolometers based on a-Si:H and a-Si xGe y:H films, contained in very large commercial infrared focal plane arrays (IRFPAs).
- Subjects
INFRARED detectors; SEMICONDUCTORS; THIN films; ELECTRICAL resistivity; AMORPHOUS silicon
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2016, Vol 213, Issue 7, p1864
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201532983