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- Title
A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs.
- Authors
Schwantuschke, Dirk; Haupt, Christian; Kiefer, Rudolf; Brückner, Peter; Seelmann-Eggebert, Matthias; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger
- Abstract
In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.
- Publication
International Journal of Microwave & Wireless Technologies, 2012, Vol 4, Issue 3, p267
- ISSN
1759-0787
- Publication type
Article
- DOI
10.1017/S1759078712000177