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- Title
Electrical and structural characteristics of metamorphic In<sub>0.38</sub>Al<sub>0.62</sub>As/In<sub>0.37</sub>Ga<sub>0.63</sub>As/In<sub>0.38</sub>Al<sub>0.62</sub>As HEMT nanoheterostructures.
- Authors
Galiev, G. B.; Klimov, E. A.; Klochkov, A. N.; Maltsev, P. P.; Pushkarev, S. S.; Zhigalina, O. M.; Imamov, R. M.; Kuskova, A. N.; Khmelenin, D. N.
- Abstract
The influence of the metamorphic buffer design and epitaxial growth conditions on the electrical and structural characteristics of metamorphic In 0.38Al 0.62As/In 0.37Ga 0.63As/In 0.38Al 0.62As high electron mobility transistor (MHEMT) nanoheterostructures has been investigated. The samples were grown on GaAs(100) substrates by molecular beam epitaxy. The active regions of the nanoheterostructures are identical, while the metamorphic buffer In xAl 1 − xAs is formed with a linear or stepwise (by Δ x = 0.05) increase in the indium content over depth. It is found that MHEMT nanoheterostructures with a step metamorphic buffer have fewer defects and possess higher values of two-dimensional electron gas mobility at T = 77 K. The structures of the active region and metamorphic buffer have been thoroughly studied by transmission electron microscopy. It is shown that the relaxation of metamorphic buffer in the heterostructures under consideration is accompanied by the formation of structural defects of the following types: dislocations, microtwins, stacking faults, and wurtzite phase inclusions several nanometers in size.
- Subjects
MODULATION-doped field-effect transistors; HETEROSTRUCTURES; GALLIUM arsenide transistors; MOLECULAR beam epitaxy; ELECTRON gas; WURTZITE; NANOSTRUCTURED materials
- Publication
Crystallography Reports, 2013, Vol 58, Issue 6, p914
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774513060114