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- Title
The Role of Nitrogen in the Formation of Luminescent Silicon Nanoprecipitates during Heat Treatment of SiO[sub 2] Layers Implanted with Si[sup +] ions.
- Authors
Kachurin, G. A.; Yanovskaya, S. G.; Zhuravlev, K. S.; Ruault, M.-O.
- Abstract
Twenty-five kiloelectronvolt Si[sup +] ions with doses of (1-4) x 10[sup 16] cm[sup -2] and 13-keV N[sup +] ions with doses of (0.2-2) x 10[sup 16] cm[sup -2] were implanted into SiO[sub 2] layers, which were then annealed at 900-1100°C to form luminescent silicon nanoprecipitates. The effect of nitrogen on this process was deduced from the behavior of the photoluminescence spectra. It was found, for a certain ratio between the concentrations of implanted silicon and nitrogen, that the photoluminescence intensity increases significantly, and its peak shifts to shorter wavelengths. It is concluded that the number of precipitation nuclei increases owing to the interaction of nitrogen with excess silicon. Eventually, this results in an increase in the number of nanocrystals and in a decrease in their average sizes. In spite of introducing additional precipitation nuclei, the minimal concentrations of excess Si on the order of 10[sup 21] cm[sup -3] and heat treatments at temperatures higher than 1000°C were still required for the formation of nanocrystals.
- Subjects
NANOSTRUCTURES; SILICON; NITROGEN
- Publication
Semiconductors, 2001, Vol 35, Issue 10, p1182
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1410661