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- Title
Effect of superstoichiometric components on the spectral and kinetic characteristics of the luminescence of ZnSe crystals with isovalent impurities.
- Authors
Vakulenko, O. V.; Kravchenko, V. N.; Ryzhikov, V. D.; Silin, V. I.; Starzhinskii, N. G.
- Abstract
The spectral and kinetic parameters of the X-ray luminescence of ZnSe crystals doped with Zn, Se, and Te were investigated during the growth process at temperatures in the range 80-500 K, and also after annealing in Zn vapor. ZnSe crystals grown from a stoichiometric mixture, or mixture containing chalcogenide impurities, typically produce the minimum level of afterglow and a rapid rise of X-ray luminescence, as well as a shift of its peak from the infrared region toward shorter wavelengths after annealing in zinc. ZnSe crystals grown from material with excess of Zn have a relatively low X-ray luminescence yield and a substantial level of afterglow. It is assumed that the growth of Te-activated crystals is accompanied by the development of thermally stable complexes of the form V[sub Zn]Te[sub Se] that act as radiative recombination centers. The introduction of excess Zn into the initial mixture produces a reduction in the concentration of V[sub Zn] and, hence, in the concentration of radiative recombination centers. It is shown that, for free-electron concentrations n < 10[sup 18] cm[sup -3], the afterglow time constant r can be described as a function of n by a model of radiative recombination that involves a single impurity level, whereas for n > 10[sup 18] cm[sup -3], the time constant decreases with increasing n, which cannot be explained in terms of the simple model. It is suggested that radiative recombination centers of a new type are produced as a result of prolonged annealing in Zn vapor.
- Subjects
ZINC selenide; STOICHIOMETRY; LUMINESCENCE
- Publication
Semiconductors, 1997, Vol 31, Issue 10, p1041
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1187021