We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Structural and Optical Characteristics of 4H-SiC UV Detectors Irradiated with Argon Ions.
- Authors
Kalinina, E. V.; Kudoyarov, M. F.; Nikitina, I. P.; Ivanova, E. V.; Zabrodskii, V. V.
- Abstract
The results of a study into the effect of irradiation with heavy Ar ions on the structural and optical characteristics of 4H-SiC are presented. It is shown that even upon single-time irradiation with 53-MeV Ar ions at a fluence of 1 × 1010 cm–2 there are at least two powerful local regions with negative deformation dominant in the structure of silicon carbide. Also, a region with positive deformation is observed in the structure. The formation of localized clusters with negative and positive deformations along with the undisturbed matrix gives rise to linear-type defects that partially relieve stresses in the structure. It is assumed that, upon irradiation with Ar ions, the resulting complex defect structure provides the effect of point-defect gettering and leads to a quantum efficiency of 4H-SiC UV photodetectors that is comparable with that of the initial samples.
- Subjects
HEAVY ions; QUANTUM efficiency; DETECTORS; ARGON; IONS; SILICON carbide
- Publication
Semiconductors, 2020, Vol 54, Issue 11, p1478
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782620110123